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Molecular-Beam Epitaxy

MBE 2D Epitaxy System for Ultrahigh Vacuum
SKU: MBE-2D
Introducing the MBE (2D) system—a sophisticated, state-of-the-art system engineered for the growth and surface analysis of novel materials and devices, including transition metal di-chalcogenide or topological insulator applications. Designed to operate under a pristine, controlled environment, this system empowers researchers to advance material science and device development. The MBE (2D) system is renowned for its exceptional base pressure capabilities, stable process pressure during heating & growth and versatile configuration options, making it an indispensable tool for advanced research in selective epitaxial growth and semiconductor equipment. Applications • III-V Ferromagnets • 2D Topological insulators • TMDs Core System Features: • Base Pressure 5 E 10-11 mbar • LN2 cryo shrouds • 2” molybloc sample puck or 3’’ bare wafer • Up to 6 Knudsen cells (35 cc) • Up to 3 cracker cells • 6 x 7 cc (or 4 x 15) linear E-beam • Pumping groups: TSP Ion Pump, Cryo or Turbomolecular Pumping • Heating &/or cooling sample stages • Growth feedback via flux gauge, quartz monitors • Integrated RHEED or RHEED AUGERS • Couples with Transfer tunnel, Load locks & Preparation chambers ...more
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