This system is used to deposit layers under high vacuum conditions on samples that are RF biased. It is a low temperature technique when compared to typical CVD process, which is a major advantage.

Core System Features:
• Base Pressure 1.10-6 mbar
• Samples up to 300 mm
• Inferior plate of 500 mm diameter with RF bias
• Various Process gases (TMS, Hexane, CF4, O 2, Ar)
• Pumping group (Suitable for corrosive gases)
• Automated Control

Applications:
• Barrier Films
• Insulators
• Optical coatings
• Biomedical

Materials:
• DLC
• Doped/Undoped Amorphous Si
• Dielectrics (Nitrides, Oxynitrides..)