PVD Systems

Physical vapor deposition (PVD) refers to a variety of vacuum deposition methods. Physical processes such as sputtering and evaporation (organic or inorganic) are used in PVD to generate a vapor, in the form of atoms, molecules, or ions. This vapor is carried across a region of low pressure from source to substrate. Upon contact with the substrate the vapor condenses to form a thin film layer. Films can be grown in this way as coatings, multilayer stacks, composites etc. to grow fully structured devices.

PVD Product Categories

System Comparison Table

PVD4 PVD4+ PVD6 PVD8 PVD20
Process Technology Magnetron Sputtering (SU)

Thermal Evaporation
– up to 4 joule effect sources

Hybrid Organic Evaporation
– up to 2 joule effect sources
– up to 2 x organic sources

Magnetron Sputtering (SU)
up to 4 x 2’’ or 3 x 3” cathodes

Hybrid Sputtering & Thermal Evaporation
– up to 4 joule effect sources
– up to 2 x 2’’ cathodes

Hybrid E-beam & Thermal Evaporation
– up to 4 joule effect sources
– 1 x multi-pocket E-Beam

Magnetron Sputtering
– Sputter Up or Sputter down configurations

– Standard: Up to 6 x 2’’ cathodes in confocal array

– Special: mix of 2’’ & 3”, or 4” in confocal, planar or off-axis

Magnetron Sputtering
– Sputter Up or Sputter down configurations

– Standard: Up to 8 x 2’’ cathodes in confocal array (standard)

– Special: mix of 2’’ & 3”, or 4” in confocal, planar or off-axis

Magnetron Sputtering (SU)
– up to 4 x 3’’ or 3 x 4” cathodes

Hybrid Sputtering & Thermal Evaporation
– up to 4 x joule effect sources
– up to 4 x 3’’ cathodes

Hybrid E-beam & Thermal Evaporation
– up to 4 x joule effect sources
– 1 x multi-pocket 15/20/25 cc E-Beam
– 1 x grid-less ion beam source

Vacuum level Standard 5 E-7 mbar

Enhanced Performance 5E-8 mbar

Standard 5 E-8 mbar

Enhanced Performance 8E-10 mbar

Standard 5 E-7 mbar

Enhanced Performance 5E-8 mbar

Enhanced Performance 8E-10 mbar

Standard 5 E-8 mbar

Standard 5 E-7 mbar

Enhanced Performance 5E-8 mbar

Chamber type Cylindrical SS304L Cylindrical SS304L Cylindrical SS304L Cylindrical SS304L D-Chamber SS304L
Load Lock compatibility No Yes – one sample at a time Yes
Standard: one sample at a time

Enhanced Performance : up to 6 samples with motorized lift.
Manual or Motorized transfer from LL to process chamber

Yes
Standard: one sample at a time

Enhanced Performance : up to 6 samples with motorized lift
Manual or Motorized transfer from LL to process chamber

Yes
Standard: one sample at a time

Enhanced Performance : up to 6 samples with motorized lift
Manual or Motorized transfer from LL to process chamber

Substrate size Up to 6 circular
Or 4’’ x 4’’ square
Compatible small pieces & shapes
Compatible with masks
Up to 6 circular
Or 4’’ x 4’’ square
Compatible small pieces & shapes
Compatible with masks
Up to 6 circular
Or 4’’ x 4’’ square
Compatible small pieces & shapes
Compatible with masks
Up to 6 circular
Or 4’’ x 4’’ square
Compatible small pieces & shapes
Compatible with masks
Up to 6 circular
Or 4’’ x 4’’ square
Compatible small pieces & shapes
Compatible with masks
Sample Treatment Heating
Standard 350 °C on sample with stabilized T-regulation design

Enhanced Performance 850 °C on sample

Direct Cooling on sample according to Process chilled water capacity (e.g. -20°C with special chillers)

Heating
Standard 350 °C on sample with stabilized T-regulation design

Enhanced Performance 850 °C on sample

Direct Cooling on sample according to Process chilled water capacity (e.g. -20°C with special chillers)

Heating
Standard 350 °C on sample with stabilized T-regulation design

Enhanced Performance 850 °C on sample

Direct Cooling on sample according to Process chilled water capacity (e.g. -20°C with special chillers)

Heating
Standard 350 °C on sample with stabilized T-regulation design

Enhanced Performance 850 °C on sample

Direct Cooling on sample according to Process chilled water capacity (e.g. -20°C with special chillers)

Heating
Standard 350 °C on sample with stabilized T-regulation design

Enhanced Performance 850 °C on sample

Direct Cooling on sample according to Process chilled water capacity (e.g. -20°C with special chillers)

Sample Rotation Up to 30 RPM
according to compatibility with other options
Up to 30 RPM
according to compatibility with other options
Up to 30 RPM
according to compatibility with other options
Up to 30 RPM
according to compatibility with other options
Up to 30 RPM
according to compatibility with other options
Sample to source variation Fixed or Variable
according to compatibility with other options
Fixed or Variable
according to compatibility with other options
Fixed or Variable
according to compatibility with other options
Fixed or Variable
according to compatibility with other options
Fixed or Variable
according to compatibility with other options
Process Feedback Quartz crystal sensor for growth rate
Standard: Sequential layer by layer growth feedback

Enhanced Performance: Co-deposition for compound or stack growth

Quartz crystal sensor for growth rate
Standard: Sequential layer by layer growth feedback

Enhanced Performance: Co-deposition for compound or stack growth

Quartz crystal sensor for growth rate
Standard: Sequential layer by layer growth feedback

Enhanced Performance: Co-deposition for compound or stack growth

Quartz crystal sensor for growth rate
Standard: Sequential layer by layer growth feedback

Enhanced Performance-1: Co-deposition for compound or stack growth

Enhanced Performance-2: High Pressure RHEED for insitu study of morphology and roughness

Quartz crystal sensor for growth rate
Standard: Sequential layer by layer growth feedback

Enhanced Performance: Co-deposition for compound or stack growth

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